Due to the quantum magnetic tunneling effect and the weak spin-orbit interaction at the atomic scale, achieving single-atom magnetism manipulation by an electric field in solid-state transistors presents a dual challenge encompassing both fundamental physical mechanisms and technical implementation. Recently, Wang et al. show the electrically controlled Zeeman effect in Dy@C84 single-molecule transistors with magnetoresistance from 600% to 1, 100% at the resonant tunnelling point, which promotes the downsizing of memories and transistors towards the atomic limit.
Figure. Schematic of a typical electrically controlled nonvolatile switching of single-atom magnetic moment corresponding to the molecular state transition.